“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
For the continuation in scaling of the complementary metal oxide semiconductor (CMOS) technology at the sub-5 nm technology node, FinFET-based logic devices are competing against the gate-all-around ...
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions and each device realisation ...
MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...
November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
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