Expanding its portfolio of industry-leading RF power transistors, NXP Semiconductors, the independent semiconductor company founded by Philips, today launched its latest Laterally Diffused Metal Oxide ...

Imec has developed a GaN MOSHEMT on silicon that achieves both record efficiency and output power for an enhancement-mode (E-mode) device operating at low supply voltage. In parallel, imec also ...

The BLL6H1214-500 is a laterally diffused metal oxide semiconductor (LDMOS) transistor for L-band radar applications delivering 500-W RF output power from 1.2 to 1.4 GHz. It is targeted at radar ...

Expanding the company’s S-band LDMOS portfolio, the ILD3135M180 transistor suits S-Band radar applications operating over the 3.1 GHz to 3.5 GHz instantaneous frequency band. Specifying a 300-ms pulse ...

IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...