Abstract: In this paper we discuss parametric measurements of devices implemented in a commercial 14nm CMOS FinFET process taken at cryogenic temperatures. The data may be used to create cryo-CMOS ...
Abstract: With datacenters introducing 800G/1.6T switches and emerging artificial intelligence accelerator ASICs demanding higher aggregate I/O bandwidth, 224Gb/s PAM-4 transceivers are expected to ...
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