This study presents simulation modeling of (ultra) wide-bandgap (WBG) Schottky barrier diodes (SBDs), specifically 4H-silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond ...
Abstract: This work presents the fabrication and characterization of 4H-SiC Schottky barrier diodes (SBDs) as high-performance temperature sensors for harsh environment applications. Owing to the ...
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