Abstract: Negative capacitance (NC) GeSn pFETs integrated with HfZrO x (HZO) ferroelectric film is demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude of IDS. The ...
Abstract: This paper describes a comparator capable of detecting mV-range input voltage signals reliably using sub-nW power consumption. The comparator uses a current-mirror-based positive feedback ...
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