Compound Semiconductor™ is an Angel Business Communications publication.

CGD says that the multi-level design proposed by IFPEN reveals several benefits of ICeGaN including increased efficiency, higher switching frequencies, reduced EMI, enhanced thermal management, as ...

As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 million loan to SK Siltron CCS, LLC to expand Ameri ...

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

For its second quarter of fiscal 2025, Wolfspeed targets revenue from continuing operations in a range of $160 million to ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Compound Semiconductor™ is an Angel Business Communications publication.

Compound Semiconductor™ is an Angel Business Communications publication.

Sivers Semiconductors, the Swedish specialist in photonics and wireless technologies, has announced its Q3 2024 results, ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.

For GaN electronics, which serves both the power and RF sectors, evidence of its rapid rise is seen in its double-digit rises ...